Samsung announced the achievement of significant progress in the field of technology, the resistive memory. Engineers Korean corporation was able to get prototypes of the non-volatile memory switch between recording and deletion of data to a trillion times.

This figure is a million times higher than standard life cycle of flash memory. Last sooner or later give way to more promising types of memory such as a phase transition, ferroelectric, magnetoresistive, or resistive.
The basic idea of ​​resistive RAM (resistive random access memory, RRAM) is that the dielectric, which usually does not conduct current, can be transferred to the conductive state by applying to it a high enough voltage. Formation of cross-electrons through special yarn sold by different mechanisms, such as defects, migration of metal, etc. The thermal or ionic resistance switching effect is shown for a large number of inorganic and organic systems, for example, with a phase change chalcogenides, the binary transition metal oxide perovskites , solid electrolytes, organic charge-transfer complexes, organic donor-acceptor systems, a variety of molecular systems.
The researchers used the Samsung structures based on silicon instead of tantalum oxide structures. In addition to significant lengthening of the life cycle of the prototypes meet the basic requirements, such as high storage density, fast switching and low power consumption.
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